GA200HS60S1

www.DataSheet.co.kr Bulletin I27222 03/06 GA200HS60S1 "HALF-BRIDGE" IGBT INT-A-PAK Features Generation 4 IGBT Technology Standard speed: optimized for hard switching operating frequencies up to 1000 Hz Very Low Conduction Losses Industry standard package Standard Speed IGBT VCES = 600V VCE(on) typ. = 1.13V @ VGE = 15V, IC = 200A TJ = 25°C Benefits Increased operating efficiency Direct mounting to heatsink Performance optimized as output inverter stage for TIG welding machines INT-A-PAK Absolute Maximum Ratings Parameters VCES IC ICM ILM VGE VISOL PD Collector-to-Emitter Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ TC = 25°C @ TC = 85°C @ TC = 25°C @ T C = 110°C Max 600 480 220 800 800 ± 20 2500 830 430 Units V A V W www.irf.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr GA200HS60S1 Bulletin I27222 03/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters VCES V CE(on) V GE(th) I CES I GES Min Typ Max Units Test Conditions V 1.13 1.08 4.5 0.025 1.21 1.18 6 1 10 ± 250 mA nA V GE = 0V, I C = 1mA V GE = 15V, I C = 200A V GE = 15V, I C = 200A, T J = 125°C I C = 0.25mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, T J = 125°C V GE = ± 20V Collector-to-Emitter Breakdown Voltage 600 Collector-to-Emitter Voltage Gate Threshold Voltage Collector-to-Emiter Leaka...