GA200SA60U

PD -50066A GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolate package ( 2,500 Volt AC/RMS) Very low internal inductance ( ≤ 5 nH typ.) Industry standard outline C Ultra-FastTM Speed IGBT VCES = 600V G E VCE(on) typ. = 1.60V @VGE = 15V, IC = 100A n-channel Benefits Designed for increased operating efficiency in power conversion: UPS, SMPS, Welding, Induction heating Lower overall losses available at frequencies ≥ 20kHz Easy to assemble and parallel Direct mounting to heatsink Lower EMI, requires less snubbing Plug-in compatible with other SOT-227 packages S O T -2 2 7 Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV VISOL PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load CurrentR Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S RMS Isolation Voltage, Any Terminal to Case, t=1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Storage Temperature Range Mounting Torque, 6-32 or M3 Screw Max. 600 200 100 400 400 ± 20 160 2500 500 200 -55 to + 150 -55 to + 150 12 lbf in(1.3Nm) Units V A V mJ V W °C Thermal Resistance Parameter RθJC RθCS Wt Junction-to...