GA200TS60UPBF

www.DataSheet.co.kr GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK (Ultrafast Speed IGBT), 200 A FEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode Very low conduction and switching losses HEXFRED® antiparallel diodes with ultrasoft recovery Industry standard package UL approved file E78996 Compliant to RoHS directive 2002/95/EC INT-A-PAK Designed and qualified for industrial level PRODUCT SUMMARY VCES IC DC VCE(on) at 200 A, 25 °C 600 V 265 A 1.74 V BENEFITS Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, welding Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Peak switching current Peak diode forward current Gate to emitter voltage RMS isolation voltage Maximum power dissipation SYMBOL VCES IC ICM ILM IFM VGE VISOL PD Any terminal to case, t = 1 min TC = 25 °C TC = 85 °C TC = 25 °C TC = 67 °C TEST CONDITIONS MAX. 600 265 200 400 400 400 ± 20 2500 625 325 V W A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coeff. of threshold voltage Forward transconductance Collector to emitter leakage current Diode forward voltage drop Gate to emitte...