www.DataSheet.co.kr
Bulletin I27221 03/06
GA200TS60UX
"HALF-BRIDGE" IGBT INT-A-PAK
Features • Generation 4 IGBT techno...
www.DataSheet.co.kr
Bulletin I27221 03/06
GA200TS60UX
"HALF-BRIDGE" IGBT INT-A-PAK
Features Generation 4 IGBT technology UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Very low conduction and switching losses HEXFREDTM antiparallel diodes with ultra-soft recovery Industry standard package UL approved
Ultra-FastTM Speed IGBT
VCES = 600V VCE(on) typ. = 1.74V @ VGE = 15V, IC = 200A
Benefits
Increased operating efficiency Direct mounting to heatsink Performance optimized for power conversion: UPS, SMPS, Welding Low EMI, requires less snubbing
INT-A-PAK
Absolute Maximum Ratings Parameters
V CES IC ICM ILM IFM V GE V ISOL PD Collector-to-Emitter
Voltage Continuos Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter
Voltage RMS Isolation
Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation @ T C = 25°C @ T C = 85°C @ T C = 25°C
Max
600 265 400 400 400 ± 20 2500 625 325
Units
V A
V W
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www.DataSheet.co.kr
GA200TS60UX
Bulletin I27221 03/06
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
VBRCES V CE(on) V GE(th) g fe I CES VFM I GES Collector-to-Emitter Breakdown
Voltage Collector-to-Emitter
Voltage Gate Threshold
Voltage Forward Transconductance Collector-to-Emiter Leakage Current Diode Forward
Voltage drop Gate-to-Emitter Leakage Curre...