IGBT/SiC Diode Co-pack
Features
•Optimal Punch Through (OPT) technology •SiC freewheeling diode • Positive temperature...
IGBT/SiC Diode Co-pack
Features
Optimal Punch Through (OPT) technology SiC freewheeling diode Positive temperature coefficient for easy paralleling Extremely fast switching speeds Temperature independent switching behavior of SiC rectifier Best RBSOA/SCSOA capability in the industry High junction temperature Industry standard packaging
Package
RoHS Compliant
GA35XCP12-247
VCES
= 1200 V
I
CM
= 35 A
VCE(SAT) = 3.0 V
2
1
Advantages
Industry's highest switching speeds High temperature operation Improved circuit efficiency Low switching losses
1 2
3
TO – 247AB
Applications
Solar Inverters Aerospace Actuators Server Power Supplies Resonant Inverters > 100 kHz Inductive Heating Electronic Welders
3
Maximum Ratings, at Tj = 150 °C, unless otherwise specified
Parameter
Symbol
Conditions
IGBT Collector-Emitter
Voltage DC-Collector Current Gate Emitter Peak
Voltage Operating Temperature Storage Temp...