GFMK3045
Trench SCHOTTKY Diodes
■ Features
● , Low VF,low IR
● , Low Power loss, High efficiency
● (ESD>=30KV) :IEC-61000-4-2,
High ESD(ESD>=30KV)
Reference standard: IEC - 61000-4-2, contact
● IF(AV) 30A
● VRRM
45V
■ Applications
● The solar industry
■ Outline Dimensions and Mark
G F 0 0 9-2
A
:
A-A
■()
Limiting Values(Absolute Maximum Rating)
Item
Repetitive Peak Reverse Voltage
Average Rectified Output Current
() Surge(Non-repetitive)Forward Current
Symbol
VRRM
Io
IFSM
.
Trench SCHOTTKY Diodes
GFMK3045
Trench SCHOTTKY Diodes
■ Features
● , Low VF,low IR
● , Low Power loss, High efficiency
● (ESD>=30KV) :IEC-61000-4-2,
High ESD(ESD>=30KV)
Reference standard: IEC - 61000-4-2, contact
● IF(AV) 30A
● VRRM
45V
■ Applications
● The solar industry
■ Outline Dimensions and Mark
G F 0 0 9-2
A
:
A-A
■()
Limiting Values(Absolute Maximum Rating)
Item
Repetitive Peak Reverse Voltage
Average Rectified Output Current
() Surge(Non-repetitive)Forward Current
Symbol
VRRM
Io
IFSM
Current Squared Time
I2t
Unit
V A A
A2s
Conditions
IR=0.2mA;;Ta=25℃
60HZ ,,Ta=25℃ 60HZ sine wave, R- load, Ta=25℃ 60HZ,,Ta=25℃ 60HZ sine wave, 1 cycle, Ta=25℃
1ms≤t<8.3ms Tj=25℃
Storage Temperature
Tstg ℃
Junction Temperature
,,
Tj
℃ ≤1h(1)① IN DC Forward Mode-Forward Operations,
without reverse bias, t ≤1 h (Fig. 1)①
■ (Ta=25℃ )
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
GFMK3045
45 30 275 315
-55 ~ +150
-55~+200
Item
Peak Forward Voltage Peak Reverse Current
() Thermal Resistance(Typical)
Symbol
VFM IRRM1 IRRM2
RθJ-c
Unit
V
mA
℃/W
Test Condition
I FM =30.0A(Every Chip)
VRM =VRRM
Ta=25℃ Ta=100℃/125℃
Between junction and case
Max
0.60 0.1 7/20
2.0
■ NOTE ● ①Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test.
Document Number 0344 Rev. 1.0, 25-OCT-12
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Io(A)
GFMK3045
■() Characteristics(Typical)
30.0 27.0 24.0 21.0 18.0 15.0 12.0 9.0 6.0 3.0
0 .