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ISSUED DATE :2005/10/03 REVISED DATE :
GJ1952
Description Features
PNP HIGH SPEED SWITCHING TRANSISTOR
The GJ1952 is designed for high speed switching applications. Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A High speed switching, typically tf =0.15 s at IC=-3A Wide SOA Complements to GJ5103
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R.
PNP HIGH SPEED SWITCHING TRANSISTOR
www.DataSheet4U.com
ISSUED DATE :2005/10/03 REVISED DATE :
GJ1952
Description Features
PNP HIGH SPEED SWITCHING TRANSISTOR
The GJ1952 is designed for high speed switching applications. Low saturation voltage, typically VCE(sat) =-0.2V at IC/IB=-3A/-0.15A High speed switching, typically tf =0.15 s at IC=-3A Wide SOA Complements to GJ5103
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Device Dissipation (TA=25 ) Total Device Dissipation (TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD TJ Tstg Ratings -100 -60 -5 -5 -10 1 10 150 -55 ~ +150 Unit V V V A A W W
Electrical Characteristics (TA = 25
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 fT Cob Min. -100 -60 -5 120 40 Typ. 80 130
unless otherwise noted)
Max. -10 -10 -0.3 -0.5 -1.2 -1.5 270 Unit V V V uA uA V V V V Test Conditions IC=-50uA, IE=0 IC=-1mA, IB=0 IE=-50uA, IC=0 VCB=-100V, IE=0 VEB=-5V, IC=0 IC=-3A, IB=-0.15A IC=-4A, IB=-0.2A IC=-3A, IB=-0.15A IC=-4A, IB=-0.2A VCE=-2V, IC=-1A VCE=-2V, IC=-3A VCE=-10V, IE=0.5A, f=30MHz VCB=-10V, IE=0, f=1MHz
MHz pF
GJ1952
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