www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/12/07 REVISED DATE :
GJ494
N-CHANNEL ENHANCEMENT MODE PO...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/12/07 REVISED DATE :
GJ494
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
30V 11m 55A
The GJ494 uses advanced trench technology to provide excellent on-resistance and low gate charge. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a high side switch in SMPS and general purpose applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic
Description
Features
Package Dimensions TO-252
REF. A B C D E F S
Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90
REF. G H J K L M R
Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20
Absolute Maximum Ratings
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current
1
Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg
Ratings 30 ±12 55 39 120 63 0.42 -55 ~ +175
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.4 50 Unit /W /W
GJ494
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ISSUED DATE :2006/12/07 REVISED DATE :
Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown
Voltage Gate Threshold
Voltage Forward ...