GJ5103

www.DataSheet4U.com ISSUED DATE :2005/10/03 REVISED DATE : GJ5103 Description Features NPN HIGH SPEED SWITCHING TRANSISTOR The GJ5103 is designed for high speed switching applications. Low saturation voltage, typically VCE(sat) =0.15V at IC/IB=3A/0.15A High speed switching, typically tf =0.1 s at IC=3A Wide SOA Complements to GJ1952 Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse PW=100ms) Total Device Dissipation (TA=25 ) Total Device Dissipation (TC=25 ) Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IC PD PD TJ Tstg Ratings 100 60 5 5 10 1 10 150 -55 ~ +150 Unit V V V A A W W Electrical Characteristics (TA = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *hFE1 *hFE2 fT Cob Min. 100 60 5 120 40 Typ. 0.15 210 80 unless otherwise noted) Max. 10 10 0.3 0.5 1.2 1.5 270 Unit V V V uA uA V V V V Test Conditions IC=50uA, IE=0 IC=1mA, IB=0 IE=50uA, IC=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=3A, IB=0.15A IC=4A, IB=0.2A IC=3A, IB=0.15A IC=4A, IB=0.2A VCE=2V, IC=1A VCE=2V, IC=3A VCB=10V, IE=-0.5A, f=30MHz VCE=10V, IE=0, f=1MHz MHz pF GJ5103 Page: 1/3 ISSUED DATE :2...