GJ75N03

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/08/16 REVISED DATE : GJ75N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 4.5m 75A Description The GJ75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Low Gate Charge *Simple Drive Requirement *Fast Switching Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, [email protected] Continuous Drain Current, [email protected] Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 25 ±20 75 62.5 350 96 0.75 400 40 -55 ~ +150 Unit V V A A A W W/ mJ A Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy EAS IAS Tj, Tstg Single Pulse Avalanche Current Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-case Rthj-amb Value 1.3 110 Unit /W /W GJ75N03 Page: 1/4 ISSUED DATE :2006/08/16 REVISED DATE : Electrical Characte...