GJ9916

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2004/05/24 REVISED DATE :2005/03/04B GJ9916 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 18V 25m 35A The GJ9916 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Single Drive Requirement *Low on-resistance *Capable of 2.5V gate drive *Low drive current Description Features Package Dimensions TO-252 REF. A B C D E F S Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 2.40 3.00 2.30 REF. 0.70 0.90 0.60 0.90 REF. G H J K L M R Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0 0.15 0.90 1.50 5.40 5.80 0.80 1.20 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, [email protected] Continuous Drain Current, [email protected] Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=125 IDM PD @TC=25 Tj, Tstg Ratings 18 ±12 35 16 90 50 0.4 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 2.5 110 Unit /W /W GJ9916 Page: 1/5 ISSUED DATE :2004/05/24 REVISED DATE :2005/03/04B Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min. 18 0.5 Typ. 0.03 18 17.5 1.2 7.9 7.3 98 25.6 98...