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GL359 Datasheet

Part Number GL359
Manufacturers GTM
Logo GTM
Description PNP SILICON PLANAR HIGH CURRENT TRANSISTOR
Datasheet GL359 DatasheetGL359 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GL359 Description Features ISSUED DATE :2005/10/27 REVISED DATE :2005/12/09B PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL359 is designed for general purpose switching and amplifier applications. 5 Amps continuous current, up to 10Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 RE.

  GL359   GL359






Part Number GL358A
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description Dual Operational Amplifier
Datasheet GL359 DatasheetGL358A Datasheet (PDF)

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  GL359   GL359







Part Number GL358
Manufacturers Gleam
Logo Gleam
Description DUAL OPERATIONAL AMPLIFIER
Datasheet GL359 DatasheetGL358 Datasheet (PDF)

Gleam Signal Conditioning GL358 DUAL OPERATIONAL AMPLIFIER Description Utilizing the circuit designs perfected for two operational amplifiers, these dual operational amplifiers feature low power drain, a common mode input voltage range extending to GND/ VEE, and single supply or split supply operation. These amplifiers have several distinct advantages over standard operational amplifier types in single supply applications. They can operate at supply voltages as low as 3.0 V or as high as 32 V,.

  GL359   GL359







Part Number GL358
Manufacturers GTM
Logo GTM
Description NPN SILICON PLANAR HIGH CURRENT TRANSISTOR
Datasheet GL359 DatasheetGL358 Datasheet (PDF)

www.DataSheet4U.com CORPORATION GL358 Description Features ISSUED DATE :2005/12/28 REVISED DATE : NPN SILICON PLANAR HIGH CURRENT TRANSISTOR The GL358 is designed for general purpose switching and amplifier applications. 6 Amps continuous current, up to 10Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 .

  GL359   GL359







Part Number GL358
Manufacturers Hynix Semiconductor
Logo Hynix Semiconductor
Description Dual Operational Amplifier
Datasheet GL359 DatasheetGL358 Datasheet (PDF)

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  GL359   GL359







PNP SILICON PLANAR HIGH CURRENT TRANSISTOR

www.DataSheet4U.com CORPORATION GL359 Description Features ISSUED DATE :2005/10/27 REVISED DATE :2005/12/09B PNP SILICON PLANAR HIGH CURRENT TRANSISTOR The GL359 is designed for general purpose switching and amplifier applications. 5 Amps continuous current, up to 10Amps peak current Excellent gain characteristic specified up to 10Amps Very low saturation voltages Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -140 -100 -6 -5 -10 3 Unit V V V A A W *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Electrical Characteristics(Ta = 25 Symbol BVCBO *BVCEO BVEBO ICBO ICES IEBO *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VCE(sat)4 *VBE(sat) *VBE(on) *hFE1 *hFE2 *hFE3 *hFE4 *hFE5 fT Min. -140 -100 -6 100 100 50 30 Typ. -20 -90 -160 -300 -1.01 -0.925 200 200 90 50 15 125 ,unless otherwise stated) Max. Unit Test Conditions V IC=-100uA , IE=0 V IC=-10mA, IB=0 V IE=-100uA ,IC=0 -50 nA VCB=-100V, IE=0 -50 nA VCES=-100.


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