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GMBCX53

GTM

PNP SILICON EPITAXIAL TRANSISTOR

www.DataSheet4U.com ISSUED DATE :2005/04/04 REVISED DATE :2005/11/21C GMBCX53 Description Features P N P S I L I C O N...


GTM

GMBCX53

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www.DataSheet4U.com ISSUED DATE :2005/04/04 REVISED DATE :2005/11/21C GMBCX53 Description Features P N P S I L I C O N E P I TA X I A L T R A N S I S T O R The GMBCX53 is designed for use in driver stages of audio amplifiers and medium power general purpose amplification. Collector-Emitter Voltage: VCEO=-80V Complementary to GMBCP56 Package Dimensions SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I J K L M Millimeter Min. Max. 3.00 REF. 1.50 REF. 0.40 0.52 1.40 1.60 0.35 0.41 5° TYP. 0.70 REF. Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total Power Dissipation Symbol Ratings Unit Tj TsTG VCBO VCEO VEBO IC PD ) Unit V V V nA nA mV mV +150 -65 ~ +150 -100 -80 -5 1 1.2 V V V A W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VBE(on) *hFE1 *hFE2 *hFE3 fT Min. -100 -80 -5 63 63 40 100 Typ. Max. -100 -100 -500 Test Conditions IC=-100uA, IE=0 IC=-1mA, IB=0 IE=-10uA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC =0 IC=-500mA, IB=-50mA IC=-500mA, VCE=-2V, VCE=-2V, IC=-5mA VCE=-2V, IC=-150mA VCE=-2V, IC=-500mA -1000 250 - MHz VCE=-5V, IC=-10mA, f=100MHz * Pulse Test: Pulse Width 380 s, Duty Cycle 2% Classification Of hFE2 Rank Range A 63 - 160 B 100 - 250 GMBCX53 1/2 ISSUED DATE :2005/04/04 REVISED DATE :2005/11/21C Characteristics...




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