GMBD4148
Description
1/1
The GMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film c...
GMBD4148
Description
1/1
The GMBD4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed in plastic surface mount package.
Package Dimensions
Style : Pin 1.Anode 2.NC 3.Cathode REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0 10
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Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Continuous Reverse
Voltage Continuous Forward Current Peak Forward Surge Current Symbol Tj Tstg VR IF IFSM Ratings +150 -65~+150 70 200 500 Unit
V mA mA
Characteristics
Characteristic Forward
Voltage Reverse Breakdown Reverse Current Total Capacitance Reverse Recovery Time
at Ta = 25
Symbol VF VR IR CT Trr Min. 100 Max. 1 5 4 4 Unit V V uA pF nS IF=10mA IR=100uA VR=75V VR=0V,F=1MHz IF=IR=10mA, RL=100 Measured at IR=1mA Test Conditions
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