ISSUED DATE :2003/07/15 REVISED DATE :2006/05/26B
G M B TA 0 6
Description Package Dimensions
NPN SILICON TRANSISTOR
The GMBTA06 is designed for general purpose amplifier applications.
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector.
NPN EPITAXIAL PLANAR TRANSISTOR
ISSUED DATE :2003/07/15 REVISED DATE :2006/05/26B
G M B TA 0 6
Description Package Dimensions
NPN SILICON TRANSISTOR
The GMBTA06 is designed for general purpose amplifier applications.
REF. A B C D E F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50 0 0.10 0.45 0.55
REF. G H K J L M
Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10°
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation(Note1) Symbol Tj Tstg VCBO VCEO VEBO IC PD Ratings +150 -55~+150 80 80 4 500 350 Unit
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V V V mA mW
Note 1.Device mounted on FR-4=1.6*1.6*0.06in
Electrical Characteristics(Ta = 25
Symbol BVCBO BVCEO BVEBO ICBO ICEO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Min. 80 80 4 50 50 100 Typ. -
,unless otherwise noted) Max. 100 100 250 1.2 MHz Unit V V V nA nA mV V IC=100uA, IE=0 IC=1mA, IB=0 IE=100uA, IC=0 VCB=80V, IE=0 VCE=80V, IB=0 IC=100mA, IB=10mA VCE=1V, IC=100mA VCE=1V, IC=10mA VCE=1V, IC=100mA VCE=2V, IC=10mA, f=100MHz
* Pulse Test: Pulse Width 380 s, Duty Cycle 2%
Test Conditions
GMBTA06
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ISSUED DATE :2003/07/15 REVISED DATE :2006/05/26B
Characteristics Curve
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