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GMM2649233EFTG

Hynix Semiconductor

8Mx64 Bits PC100/PC133 Sdram Unbuffered Dimm Based on 8Mx8 Sdram With Lvttl

8Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM2649233EFTG Descr...


Hynix Semiconductor

GMM2649233EFTG

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Description
8Mx64 bits PC100/PC133 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh GMM2649233EFTG Description The GMM2649233EFTG is a 8M x 64bits Synchronous Dynamic RAM MODULE which is assembled 8 pieces of 8M x 8bits Synchronous DRAMs in 54 pin TSOP II package and one 2048 bit EEPROM in 8pin TSSOP package mounted on a 168 pin printed circuit board with decoupling capacitors. The GMM2649233EFTG is optimized for application to the systems which are required high density and large capacity such as main memory of the computers and an image memory systems, and to the others which are requested compact size. The GMM2649233EFTG provides common data inputs and outputs. Features * PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/7J(PC100,3-2-2) * 3.3V +/- 0.3V Power supply * Maximum Clock frequency 100/125/133/143 MHz * LVTTL Interface * Burst read/write operation and burst read/ single write operation capability * Programmable burst length ; 1, 2, 4, 8, Full page * Programmable burst sequence Sequential / Interleave * Full Page burst length capability Sequential burst Burst stop capability * Programmable CAS Latency ; 2, 3 * CKE power down mode * Input / Output data masking * 4096 Refresh Cycles / 64ms * Auto refresh / Self refresh Capability * Serial Presence Detect with EEPROM GMM2649233EFTG Single side Pin Name CK0, 1, 2, 3 CKE0 S0, 2 RAS CAS WE A0 ~ A11 BA0,1 DQ0 ~ 63 DQMB0 ~ 7 V CC V SS NC V REF SDA SCL SA0 ~ 2 DU Clock input C...




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