GS3002EL

Features ■ Low profile ■ Low forward voltage ■ Forward current: 0.2A ■ Reverse Voltage 30V ■ MSL: Lever 1 Applications ■ Ultra high-speed switching ■ Voltage clamping ■ Protection circuits ■ Low voltage rectification ■ High efficiency DC-to-DC conversion ■ Low power consumption applications GS3002EL Schottky Barrier Diode SOD-882 Schematic Diagram Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Symbol Condition Min Max Unit Continuous Reverse Voltage Repetitive Peak Forward Current Continuous Forward Current Non-repetitive Peak Forward Current Junction Temperature Operating Ambient Temperature Storage Temperature VRRM IFRM IF IFSM Tj Tamb(1) Tstg(1) tp≤1ms , δ≤0.25 t=8.3ms,square wave -65 -65 -65 30 2.5 0.2 3.0 +150 +150 +150 V A A A °C °C °C Notes: 1. For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV) rating will be available on request. 1/3 GS3002EL Schottky Barrier Diode Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Continuous forward voltage Continuous reverse current Diode capacitance Pulse test:tp≤300μs; δ≤0.02 Symbol VF IR Cd Condition IF=0.1mA IF=1mA IF=10mA IF=100mA IF=200mA VR=10V VR=30V VR=1V;f=1MHz Typ 95 160 240 360 410 5 25 30 Max Unit 190 mV 240 mV 300 mV 420 mV 480 mV 15 μA 100 μA pF Typical Characteristic ...