GSBAT54ST

Features ■ Low forward voltage drop ■ Fast switching ■ PN junction guard ring for transient and ESD protection Schematic Diagram and Marking GSBAT54T GSBAT54xT Series Schottky Diode GSBAT54AT 3 1 2 SOT-523 Marking: L1 GSBAT54CT Marking: L2 GSBAT54ST Marking: L3 Marking: L4 Absolute Maximum Ratings (TA=25°C unless otherwise noted） Parameter Peak Repetitive Reverse Voltage Symbol VRRM Value 30 Working Peak Reverse Voltage VRWM 30 DC Reverse Voltage VR 30 Forward Continuous Voltage Repetitive Peak Forward Voltage Non-repetitive Peak Forward Surge Current @t<1.0s Power Dissipation Thermal Resistance Junction to Ambient Junction and Storage Temperature IF IFRM IFSM PD RθJA TJ,TSTG 200 300 600 150 833 -65 to +150 1/3 Unit V V V mA mA mA mW °C/W °C GSBAT54xT Series Schottky Diode Electrical Characteristics (TA=25°C unless otherwise noted） Parameter Symbol Test Conditions Reverse Breakdown Voltage V(BR)R IR=100μA Leakage Current Forward Voltage =IR VR 25V IF=0.1mA IF=1.0mA VF IF=10mA IF=30mA Min Max 30 2.0 240 320 400 500 Unit V μA mV Typical Total Capacitance =CT =VR 1.0V,f 1MHz Reverse Recovery Time trr IF=IR=10mA,to IR=1.0mA RL=100Ω 10 pF 5.0 ns Typical Electrical Characteristic Curves 1/3 2/3 Package Outline Dimensions A KB D G H SOT-523 C J GSBAT54xT Series Schottky Diode SOT-523 Dim Min Max A 1.5 1.7 B 0.75 0.85 C 0.6 0.8 D 0.15 0.3 G 0.9 1.1 H 0.02 0.1 J 0.1Typical K 1.45 1.75 All Dimensions in mm www.goodarksemi.com 3/3 Doc.USGSB...