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GSC4409 Datasheet

Part Number GSC4409
Manufacturers GTM
Logo GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet GSC4409 DatasheetGSC4409 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/10/19 REVISED DATE : GSC4409 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 7.5m -15A The GSC4409 uses advanced trench technology to provide excellent on-resistance and ultra low gate charge. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Cha.

  GSC4409   GSC4409






Part Number GSC4407
Manufacturers GTM
Logo GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet GSC4409 DatasheetGSC4407 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/04/20 REVISED DATE : GSC4407 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 14m -10.7A The GSC4407 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requi.

  GSC4409   GSC4409







Part Number GSC4404
Manufacturers GTM
Logo GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet GSC4409 DatasheetGSC4404 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/10/27 REVISED DATE : GSC4404 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 24m 8.5A Description The GSC4404 uses advanced trench technology to provide excellent on-resistance, low gate charge and operation with gate voltage as low as 2.5V. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications. *Simple Drive Req.

  GSC4409   GSC4409







P-CHANNEL ENHANCEMENT MODE POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/10/19 REVISED DATE : GSC4409 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 7.5m -15A The GSC4409 uses advanced trench technology to provide excellent on-resistance and ultra low gate charge. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for use as a load switch or in PWM applications. *Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings -30 ±20 -15 -12.8 -80 2.5 0.02 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-amb Value 50 Unit /W GSC4409 Page: 1/4 ISSUED DATE :2006/10/19 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leaka.


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