GSDAN222

GSDAN222 Switching Diode Features ■ High speed ■ Suitable for high packing density layout ■ High reliability 3 2 1 SOT-523 Absolute Maximum Ratings (TA=25°C unless otherwise specified) Parameter Non-Repetitive Peak Reverse Voltage DC Blocking Voltage Forward Continuous Current Non-Repetitive Peak Forward Surge Current @t=8.3ms Average Rectified Output Current Power Dissipation Thermal Resistance From Junction to Ambient Junction Temperature Storage Temperature Range Symbol VRM VR IFM IFSM IO PD RθJA TJ TSTG Value 80 80 300 2.0 100 150 833 150 -55 to +150 1 3 2 Schematic Diagram Unit V V mA A mA mW °C/W °C °C Electrical Characteristics (TA=25°C unless otherwise specified) Parameter Reverse Breakdown Voltage Reverse Voltage Leakage Current Forward Voltage Diode Capacitance Reverse Recovery Time Symbol Test conditions Min Max V(BR) IR= 100μA 80 - IR VR=70V - 0.1 VF IF=100mA - CD VR=0, f=1MHz - trr VR=6V, IF=IR=5mA - 1.2 3.5 4 Unit V μA V pF ns 1/3 T a =100℃ Typical Characteristics Curves Forward Characteristics 300 100 10 1 T a =25℃ GSDAN222 Switching Diode 10000 1000 100 10 Reverse Characteristics T =100℃ a T =25℃ a REVERSE CURRENT I (nA) R FORWARD CURRENT I (mA) F 0.1 0.0 0.4 0.8 1.2 FORWARD VOLTAGE V (V) F 1.6 1 0 20 40 60 80 REVERSE VOLTAGE V (V) R CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics 1.6 T =25℃ a f=1MHz 1.4 1.2 1.0 0.8 0.6 0 4 8 12 16 20 REVERSE VOLTAGE V (V) R Power Derating ...