GSM02N15

GSM02N15 150V N Channel MOSFET Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features  150V,1.4A, RDS(ON) =480mΩ@VGS = 10V  Improved dv/dt capability  TSOP-6 package design Applications  Portable Equipment  Battery Powered System  Load Switch Packages & Pin Assignments GSM02N15TSF (TSOP-6) Pin Symbo l 1D 2D 3G 4S 5D 6D Description Drain Drain Gate Source Drain Drain GSM02N15 www.gs-power.com 1 Ordering Information GS P/N GSM02N15 TS F Package Code Pb Free Code Part Number GSM02N15TSF Package TSOP-6 Quantity Reel 3000 PCS Marking Information Absolute Maximum Ratings TA=25ºC Unless otherwise noted Sym...