GSM2312P

GSM2312P 20V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V „ Improved dv/dt capability „ Fast switching „ Suit for 1.8V Gate Drive Applications „ Green Device Available „ SOT-23 package design Applications „ Notebook „ Load Switch „ Hand-Held Instruments Packages & Pin Assignments GSM2312PJZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain Ordering Information GSM2312P www.gs-power.com 1 Marking Information Part Number GSM2312PJZF Package SOT-23 Part Marking TYWMM Quantity 3000pcs Absolute Maximum Ratings TA=25ºC Unless otherwise noted Symbol Par...