GSM3025S

30V N-Channel Enhancement Mode MOSFET Product Description GSM3025S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ 30V/9.0A,RDS(ON)=32mΩ@VGS=10V „ 30V/7.0A,RDS(ON)=36mΩ@VGS=4.5V „ 30V/5.0A,RDS(ON)=42mΩ@VGS=2.5V „ Super high density cell design for extremely low RDS (ON) „ TO-252-2L package design Applications „ DC/DC Converter „ Load Switch / CCFL Inverter „ Power Management in Notebook Computer Packages & Pin Assignments GSM3025SDF (TO-252-2L) GSM3025S Pin Description 1 Gate 2 Source 3 Drain Ordering & Marking Information GS P/N GSM3025S D F Package Code Halogen Free/ Pb Free Code Part Ordering No. GSM3025SDF Part Marking 3025S Package TO-252-2L Quantity Reel 2500 PCS www.gs-power.com 1 Absolute Maximum Ratings (TA=25ºC...