GSM3406AS

30V N-Channel Enhancement Mode MOSFET Product Description GSM3406AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ 30V/2.8A,RDS(ON)=45mΩ@VGS=10V „ 30V/2.4A,RDS(ON)=55mΩ@VGS=4.5V „ Super high density cell design for extremely low RDS (ON) „ SOT-23 package design Applications „ Power Management in Note book „ LED Display „ DC-DC System „ LCD Panel Packages & Pin Assignments GSM3406ASJZF(SOT-23) GSM3406AS 1 Gate 2 Source 3 Drain Ordering Information GS P/N GSM3406AS P F Package Code Halogen Free/ Pb Free Code www.gs-power.com 1 Marking Information Part Number GSM3406ASJZF Package SOT-23 Absolute Maximum Ratings (TA=25ºC unless otherwise noted) Symbol VDSS VGSS ID IDM IS PD TJ TSTG RθJA Parameter Drain-Source Voltage Gate...