GSM3911P

GSM3911P 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Packages & Pin Assignments GSM3911PJZF (SOT-23) Features „ -30V, -4.1A, RDS(ON)=55mΩ@VGS=-10V „ Fast switching „ Suit for -4.5V Gate Drive Applications „ Green Device Available „ SOT-23 package design Applications „ Notebook „ Load Switch „ Battery Protection „ Hand-held Instruments Top Views Pin Description 1 Gate 2 Source 3 Drain Ordering & Marking Information GS P/N GSM3911P JZ F Package Code Pb Free Code Part Number GSM3911PJZF Package SOT-23 Part Marking HYWMM Quantity 3000pcs www.gs-power.com 1 GSM3911P Absolute Maximum Ratings TA=25ºC Unles...