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GSM3912P Datasheet

Part Number GSM3912P
Manufacturers Globaltech
Logo Globaltech
Description N-Channel MOSFET
Datasheet GSM3912P DatasheetGSM3912P Datasheet (PDF)

GSM3912P 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 30V, 6.5A, RDS(ON)=24mΩ@VGS=10V „ Improved dv/dt capability „.

  GSM3912P   GSM3912P






N-Channel MOSFET

GSM3912P 30V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 30V, 6.5A, RDS(ON)=24mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS Guaranteed „ Green Device Available „ SOT-23 package design Applications „ MB / VGA / Vcore „ Load Switch „ Hand-Held Instrument Packages & Pin Assignments GSM3912PJZF (SOT-23) Top Views Pin Description 1 Gate 2 Source 3 Drain Ordering Information GSM3912P www.gs-power.com 1 Marking Information Part Number GSM3912PJZF Package SOT-23 Part Marking IYWMM Quantity 3000pcs Absolute Maximum Ratings TA=25ºC Unless otherwise noted Symbol Parameter VDS .


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