GSM6604

20V N & P Pair Enhancement Mode MOSFET Product Description GSM6604, N & P Pair enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Features „ N-Channel 20V/3.5A,RDS(ON)=52mΩ@VGS=4.5V 20V/2.6A,RDS(ON)=62mΩ@VGS=2.5V „ P-Channel -20V/-3.0A,RDS(ON)=105mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=150mΩ@VGS=-2.5V „ Super high density cell design for extremely low RDS (ON) „ Exceptional on-resistance and maximum DC current capability „ TSOP-6P package design Packages & Pin Assignments GSM6604TSF (TSOP-6P) Applications „ Power Management in Note book „ Portable Equipment „ Battery Powered System „ DC/DC Converter „ Load Switch „ DSC „ LCD Display inverter GSM6604 Pin Symbol 1 G1 2 S2 3 G2 4 D2 5 S1 6 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 www.gs...