Dual N-Channel Enhancement Mode MOSFET
Product Description
The GSM7002T is the Dual N-Channel enhancement mode field ef...
Dual N-Channel Enhancement Mode
MOSFET
Product Description
The GSM7002T is the Dual N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.
These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
They can be used in most applications requiring up to 640mA DC and can deliver pulsed currents up to 950mA. These products are particularly suited for low
voltage, low current applications such as small servo motor control, power
MOSFET gate drivers, and other switching applications.
Features
60V/0.50A,RDS(ON)=2.0Ω@VGS=10V 60V/0.20A,RDS(ON)=4.0Ω@VGS=4.5V Super high density cell design for extremely
low RDS (ON) Exceptional on-resistance and maximum DC
current capability SOT-363 package design
Applications
Drivers: Relays, Solenoids, Lamps, Hammers, Display , Memories, Transistors, etc.
High saturation current capability. Direct Logic-Level Inter...