MOSFET. GSM8968 Datasheet

GSM8968 Datasheet PDF

Part GSM8968
Description N-Channel MOSFET
Feature GSM8968 100V N-Channel Enhancement Mode MOSFET Product Description GSM8968, N-Channel enhancement m.
Manufacture Globaltech
Datasheet
Download GSM8968 Datasheet

GSM8968 100V N-Channel Enhancement Mode MOSFET Product Desc GSM8968 Datasheet




GSM8968
GSM8968
100V N-Channel Enhancement Mode MOSFET
Product Description
GSM8968, N-Channel enhancement mode
MOSFET, uses Advanced Trench Technology
to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low
voltage power management, and low inline
power loss are needed in commercial industrial
surface mount applications.
Features
„ 100V/3.0A,RDS(ON)=300m@VGS=10V
„ 100V/2.0A,RDS(ON)=310m@ VGS=4.5V
„ Super high density cell design for extremely low
RDS(ON)
„ SOT-89-3L package design
Applications
„ Motor and Load Control
„ Power Management in White LED System
„ Push Pull Converter
„ LCD TV Inverter & AD/DC Inverter Systems.
Packages & Pin Assignments
GSM8968YF(SOT-89-3L)
Pin Description
1 Gate
2 Drain
3 Source
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GSM8968
Ordering Information
Part Number
GSM8968YF
Marking Information
Package
SOT-89-3L
Quantity Reel
1000 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Parameter
Drain-Source Voltage
Gate –Source Voltage
Continuous Drain Current(TJ=150ºC)
Pulsed Drain Current
TA =25ºC
TA =70ºC
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
TA =25ºC
TA =70ºC
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Typical
100
±20
3.0
2.0
6
1.6
1.45
0.6
150
-55 to150
120
Unit
V
V
A
A
A
W
ºC
ºC
ºC/W
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