GSMD18N20

GSMD18N20 200V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 200V, 18A, RDS(ON)=140mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ VGS Guaranteed ±25V „ Green Device Available „ TO-252-2L package Applications „ LED Backlight & Lighting „ UPS „ High Voltage Switching „ Motor Drive Applications Packages & Pin Assignments GSMD18N20DF (TO-252-2L) Top View Description Gate Source Drain GSMD18N20 www.gs-power.com 1 Ordering Information GS P/N GSMD18N20 D F Package Code Pb Free Code Part Number GSMD18N20DF Package TO-252-2L Quantity Reel 2500 PCS Marking Information MD18N20 YW MMMM Pa...