GSMDB2116S

GSMDB2116S 20V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V „ P-Channel -20V, -4.7A, RDS(ON)=95mΩ@VGS=-4.5V „ Fast switching „ Suit for -1.8V/1.8V Gate Drive Applications „ Green Device Available „ DFN2X2-6L package design Applications „ Notebook „ Load Switch „ Networking „ Hand-held Instruments Packages & Pin Assignments GSMDB2116SFF (DFN2X2-6L) Top Views Pin Description 1 Source 1 2 Gate 1 3 Drain 2 4 Source 2 5 Gate 2 6 Drain 1 GSMDB2116S www.gs-power.com 1 Ordering Information GS P/N GSMDB2116S F F Package Code Pb Free Code Marking In...