GSMDC2116M
20V N+P Dual Channel MOSFETs
Product Description
These N+P dual Channel enhancement mode power field effect ...
GSMDC2116M
20V N+P Dual Channel
MOSFETs
Product Description
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
N-Channel 20V, 5A, RDS(ON)=40mΩ@VGS=4.5V
P-Channel -20V, -4.7A, RDS(ON)=100mΩ@VGS=-4.5V
Fast switching Suit for -1.8V/1.8V Gate Drive Applications Green Device Available DFN2X3-8L package design
Applications
Notebook Load Switch Networking Hand-Held Instruments
Packages & Pin Assignments
GSMDC2116MFF (DFN2X3-8L)
GSMDC2116M
Bottom Views
Pin Description 1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1
www.gs-power.com 1
Ordering Information
GS P/N
GSMDC2116M F F Package Code...