GSMDC2604Z
20V N-Channel MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors ar...
GSMDC2604Z
20V N-Channel
MOSFETs
Product Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Features
20V, 80A, RDS(ON)=3.5mΩ@VGS=10V Improved dv/dt capability Fast switching 100% EAS guaranteed Green Device Available DFN3X3-8L package design
Applications
MB / VGA / Vcore POL Applications SMPS 2nd SR
Packages & Pin Assignments
GSMDC2604ZFF (DFN3X3-8L)
GSMDC2604Z
Top View
Pin Description 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain
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Ordering Information
GS P/N
GSMDC2604Z F F Package Code Pb Free Code
Part Number
GSMDC2604ZFF
Package
DFN3X3-8L
Marking Information
Quantity
3000 PCS
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