GSMDC6906Z

GSMDC6906Z 60V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ 60V, 33A, RDS(ON)=21mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ DFN3X3-8L package design Applications „ Motor Drive „ Power Tools „ LED Lighting Packages & Pin Assignments GSMDC6906ZFF (DFN3X3-8L) GSMDC6906Z Top View Pin Description 1 Source 2 Source 3 Source 4 Gate 5 Drain 6 Drain 7 Drain 8 Drain www.gs-power.com 1 Ordering Information GS P/N GSMDC6906Z F F Package Code Pb Free Code Part Number GSMDC6906ZFF Package DFN3X3-8L Marking Information Quantity 3000 PCS Absolute ...