GSMDD0903

GSMDD0903 100V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -100V, -10A, RDS(ON)=140mΩ@VGS=-10V „ VGS Guaranteed ±25V „ Improved dv/dt capability „ Fast switching „ Green Device Available „ TO-252-2L package design Applications „ Networking „ Load Switch „ LED applications Packages & Pin Assignments GSMDD0903DF (TO-252-2L) Top View Description Gate Source Drain GSMDD0903 www.gs-power.com 1 Ordering Information GS P/N GSMDD0903 D F Package Code Pb Free Code Part Number GSMDD0903DF Package TO-252-2L Marking Information Quantity Reel 2500 PCS Absolute Maximum Ratings TC=25ºC Unless otherwis...