GSMDD0906

GSMDD0906 100V N-Channel MOSFETs Product Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply. Features „ 100V, 15A, RDS(ON)=90mΩ@VGS=10V „ Improved dv/dt capability „ Fast switching „ 100% EAS guaranteed „ Green Device Available „ TO-252-2L package design Applications „ Networking „ Load Switch „ LED applications Packages & Pin Assignments GSMDD0906DF (TO-252-2L) Top View Description Gate Source Drain GSMDD0906 www.gs-power.com 1 Ordering Information GS P/N GSMDD0906 D F Package Code Pb Free Code Part Number GSMDD0906DF Package TO-252-2L Marking Information Quantity Reel 2500 PCS Absolute Maximum Ratings TA=25ºC Unless otherwise note...