GSMDS3710

GSMDS3710 30V N+P Dual Channel MOSFETs Product Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Packages & Pin Assignments GSMDS3710SF (SOP-8) Features „ N-Channel 30V, 10A, RDS(ON)=13mΩ@VGS=10V „ P-Channel -30V, -6.5A, RDS(ON)=28mΩ@VGS=-10V „ Fast switching „ Suit for 4.5V / -4.5V Gate Drive Applications „ Green Device Available „ SOP-8 package design Applications „ DC Fan „ Motor Drive Applications „ Networking „ Half / Full Bridge Topology GSMDS3710 Top View Pin Description 1 Source 1 2 Gate 1 3 Source 2 4 Gate 2 5 Drain 2 6 Drain 2 7 Drain 1 8 Drain 1 www.gs-power.com 1 Ordering Information Part Number GSMDS3710SF Marking ...