GSMDS3807

GSMDS3807 30V Dual P-Channel MOSFETs Product Description These Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -30V, -7A, RDS(ON)=23mΩ@VGS=-10V „ Improved dv/dt capability „ Fast switching „ Suit for -4.5V Gate Drive Applications „ Green Device Available „ SOP-8 package design Applications „ MB / VGA / Vcore „ Load Switch „ LED Applications „ POL Applications Packages & Pin Assignments GSMDS3807SF (SOP-8) Pin No 1 2 3 4 Description Source 1 Gate 1 Source 2 Gate 2 Pin No 5 6 7 8 Description Drain 2 Drain 2 Drain 1 Drain 1 GSMDS3807 www.gs-power.com 1 Ordering Information GS P/N GSMDS3807 S F Package Code Halogen Free/ Pb Free Code ...