MOSFET. GSMDS3903 Datasheet

GSMDS3903 Datasheet PDF

Part GSMDS3903
Description P-Channel MOSFET
Feature GSMDS3903 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field ef.
Manufacture Globaltech
Datasheet
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GSMDS3903 30V P-Channel MOSFETs Product Description These P GSMDS3903 Datasheet




GSMDS3903
GSMDS3903
30V P-Channel MOSFETs
Product Description
These P-Channel enhancement mode power field
effect transistors are using trench DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulse in the avalanche and
commutation mode.
These devices are well suited for high efficiency
fast switching applications.
Features
„ -30V, -13A, RDS(ON)=9.5m@VGS=-10V
„ Fast switching
„ Suit for -4.5V Gate Drive Applications
„ Green Device Available
„ SOP-8 package design
Applications
„ MB / VGA / Vcore
„ POL Applications
„ Load Switch
„ LED Application
Packages & Pin Assignments
GSMDS3903SF (SOP-8)
Pin Description Pin
1 Source 5
2 Source 6
3 Source 7
4 Gate 8
Description
Drain
Drain
Drain
Drain
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GSMDS3903
Ordering Information
Part Number
GSMDS3903SF
Marking Information
Package
SOP-8
Quantity Reel
4000 PCS
Absolute Maximum Ratings
TA=25ºC Unless otherwise noted
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate –Source Voltage
ID Continuous Drain Current
TA=25
TA=100
IDM Pulsed Drain Current
PD Power Dissipation (TA=25)
Power Dissipation (Derate above 25)
TJ
TSTG
RθJA
RθJC
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case
Typical
-30
±20
-13
-7.8
-52
4.2
0.034
-55 to +150
-55 to +150
60
30
Unit
V
V
A
A
W
W/
/W
/W
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