GSMDS3907

GSMDS3907 30V P-Channel MOSFETs Product Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. Features „ -30V, -8A, RDS(ON)=20mΩ@VGS=-10V „ Fast switching „ Suit for -4.5V Gate Drive Applications „ Green Device Available „ SOP-8 package design Applications „ MB / VGA / Vcore „ POL Applications „ Load Switch „ LED Application Packages & Pin Assignments GSMDS3907SF (SOP-8) GSMDS3907 Pin Description Pin 1 Source 5 2 Source 6 3 Source 7 4 Gate 8 Description Drain Drain Drain Drain www.gs-power.com 1 Ordering Information Part Number GSMDS3907SF Marking Information Package SOP-8 Quantity Reel 4000 PCS Absolute Maximum Ratings TA=25ºC Unless ...