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GSS4224 Datasheet

Part Number GSS4224
Manufacturers GTM
Logo GTM
Description POWER MOSFET
Datasheet GSS4224 DatasheetGSS4224 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/12 REVISED DATE :2005/09/30B GSS4224 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 14m 10A The GSS4224 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low On-Resistance *Simple Drive Requirement *Dual N MOSFET Package Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40.

  GSS4224   GSS4224






Part Number GSS4228
Manufacturers GTM
Logo GTM
Description POWER MOSFET
Datasheet GSS4224 DatasheetGSS4228 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/12 REVISED DATE :2005/09/30B GSS4228 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 26m 6.8A Description The GSS4228 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Low On-Resistance *Simple Drive Requirement *Dual N MOSFET Package Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19.

  GSS4224   GSS4224







Part Number GSS4226
Manufacturers GTM
Logo GTM
Description POWER MOSFET
Datasheet GSS4224 DatasheetGSS4226 Datasheet (PDF)

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/21 REVISED DATE :2005/09/30 GSS4226 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 18m 8.2A The GSS4226 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low On-Resistance *Simple Drive Requirement *Dual N MOSFET Package Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40.

  GSS4224   GSS4224







POWER MOSFET

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/04/12 REVISED DATE :2005/09/30B GSS4224 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 14m 10A The GSS4224 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low On-Resistance *Simple Drive Requirement *Dual N MOSFET Package Description Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings 30 20 10 8 30 2 0.016 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-amb Value 62.5 Unit /W GSS4224 Page: 1/4 ISSUED DATE :2005/04/12 REVISED DATE :2005/09/30B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 30 1.0 Typ. 0.03 16 23 6 14 12 8 34 16 1910 400 280 0.9 Max. 3.0 100 1 25 14 20 15 3070 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 ,.


2007-09-13 : GSP202U    GSS1120    GSS2030    GSS4224    GSS4226    GSS4228    GSS4500    GSS4501    GSS4501S    GSS4502   


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