www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/04/12 REVISED DATE :2005/09/30B
GSS4228
N-CHANNEL ENHANC...
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2005/04/12 REVISED DATE :2005/09/30B
GSS4228
N-CHANNEL ENHANCEMENT MODE POWER
MOSFET
BVDSS RDS(ON) ID
30V 26m 6.8A
Description
The GSS4228 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. *Low On-Resistance *Simple Drive Requirement *Dual N
MOSFET Package
Features
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0 0.40 0.19 6.20 5.00 4.00 8 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 30 20 6.8 5.5 40 2 0.016 -55 ~ +150
Unit V V A A A W W/
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rthj-amb
Value 62.5
Unit /W
GSS4228
Page: 1/4
ISSUED DATE :2005/04/12 REVISED DATE :2005/09/30B
Electrical Characteristics(Tj = 25
Parameter Drain-Source Breakdown
Voltage
Breakdown
Voltage Temperature Coefficient
Unless otherwise specified)
Min. 30 1.0 Typ. 0.03 15 9 2 6 10 9 18 6 580 150 108 Max. 3.0 100 1 25 26 40 15 930 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS...