www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/04/24 REVISED DATE :
GSS6982
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Description
CH1 BVDSS 30V N-CH RDS(ON) 18m N-CH ID 8.5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7.3A
Features
*Low On-resistance *Fast Switching
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.
POWER MOSFET
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/04/24 REVISED DATE :
GSS6982
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET
The GSS6982 provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
Description
CH1 BVDSS 30V N-CH RDS(ON) 18m N-CH ID 8.5A CH2 BVDSS 30V N-CH RDS(ON) 26m N-CH ID 7.3A
Features
*Low On-resistance *Fast Switching
Package Dimensions
REF. A B C D E F
Millimeter Min. Max.
5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25
REF. M H L J K G
Millimeter Min. Max.
0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP.
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings
CH-1 CH-2
Unit V V A A A W W/
30 ±25 8.5 6.8 30 2.0 0.016
30 ±25 7.3 5.8 30
Total Power Dissipation Linear Derating Factor
Operating Junction and Storage Temperature Range
-55 ~ +150
Thermal Data
Parameter Thermal Resistance Junction-ambient
3
Symbol Max. Rthj-a
Value 62.5
Unit /W
GSS6982
Page: 1/7
ISSUED DATE :2006/04/24 REVISED DATE :
CH-1 Electrical Characteristics (Tj = 25
Parameter Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
unless otherwise specified)
Min. 30 1.0 Typ. 0.03 12 15 23 14 4 8 12 7 25 9 1050 240 165 1.6 Max. 3.0 ±100 1 25 18 30 22 1680 2.4 pF ns nC Unit V V/ V .