GSS9930

www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2005/10/13 REVISED DATE : GSS9930 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET The GSS9930 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. *Simple Drive Requirement *Low On-resistance *Fast Switching Description N-CH BVDSS 30V N-CH RDS(ON) 33m N-CH ID 6.3A P-CH BVDSS -30V N-CH RDS(ON) 55m N-CH ID -5.1A Features Package Dimensions REF. A B C D E F Millimeter Min. Max. 5.80 4.80 3.80 0° 0.40 0.19 6.20 5.00 4.00 8° 0.90 0.25 REF. M H L J K G Millimeter Min. Max. 0.10 0.25 0.35 0.49 1.35 1.75 0.375 REF. 45° 1.27 TYP. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings N-channel P-channel Unit V V A A A W W/ 30 ±25 6.3 4.2 20 2.0 0.016 -30 ±25 -5.1 -3.4 -20 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range -55 ~ +150 Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Value 62.5 Unit /W GSS9930 Page: 1/7 ISSUED DATE :2005/10/13 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 Parameter Drain-Source Bre...