GT10G131

GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm 5th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) Peak collector current: IC = 200 A (max) Built-in zener diode between gate and emitter SOP-8 package Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage VCES 400 V Gate-emitter voltage DC VGES ±6 V Pulse VGES ±8 Collector current Pulse (Note 1) ICP 200 A Collector power (Note 2a) PC (1) 1.9 W dissipation(t=10 s) (Note 2b) PC (2) 1.0 W Junction temperature Storage temperature range Tj 150 °C Tstg −55~150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1.2.3 Emitter 4 Gate 5.6.7.8 Collector JEDEC ⎯ JEITA ⎯ TOSHIBA 2-6J1C Weight: 0.08 g (typ.) Circuit Configuration 8765 Thermal Characteristi...