GT20J341
Discrete IGBTs Silicon N-Channel IGBT
GT20J341
1. Applications
• Motor Drivers
2. Features
(1) (2) (3) Sixth ...
GT20J341
Discrete IGBTs Silicon N-Channel IGBT
GT20J341
1. Applications
Motor Drivers
2. Features
(1) (2) (3) Sixth generation Low saturation
voltage: VCE(sat) = 1.5 V (typ.) (IC = 20 A) FRD included between emitter and collector
3. Packaging and Internal Circuit
1: Gate 2: Collector 3: Emitter
TO-220SIS
1
2012-04-26 Rev.2.0
Free Datasheet http://www.datasheet4u.com/
GT20J341
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics Collector-emitter
voltage Gate-emitter
voltage Collector current (DC) Collector current (DC) Collector current (pulsed) Diode forward current (DC) Diode forward current (DC) Short circuit withstand time Collector power dissipation Junction temperature Storage temperature (Tc = 25) (Tc = 25) (Tc = 100) (Note 1) (Tc = 25) (Tc = 100) Symbol VCES VGES IC IC ICP IF IF tsc PC Tj Tstg Rating 600 ±25 20 11 80 20 9 5 45 150 -55 to 150 µs W A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/
voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and...