GT40QR21

Discrete IGBTs Silicon N-Channel IGBT GT40QR21 GT40QR21 1. Applications Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : tf = 0.20 µs (typ.) (IC = 40 A) FWD : trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage : VCE(sat) = 1.9 V (typ.) (IC = 40 A) (6) High junction temperature : Tj = 175 (max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-12 1 2014-01-07 Rev.2.0 GT40QR21 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector current (1 ms) Diode forward current (DC) Diode forward current (100 µs) Collector power dissipation Junction temperature Storage temperature Mounting torque (Tc = 25) (Tc = 100) (Tc = 25) (Note 1) VCES VGES IC ICP IF IFP PC Tj Tstg TOR 1200 ±25 40 35 80 20 80 230 175 -55 to 175 0.8 V A W  Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating c...