Discrete IGBTs Silicon N-Channel IGBT
GT40WR21
GT40WR21
1. Applications (Note)
• Dedicated to Voltage-Resonant Inverte...
Discrete IGBTs Silicon N-Channel IGBT
GT40WR21
GT40WR21
1. Applications (Note)
Dedicated to
Voltage-Resonant Inverter Switching Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching
IGBT : tf = 0.15 µs (typ.) (IC = 40 A) FWD : trr = 1.0 µs (typ.) (IF = 15 A) (5) Low saturation
voltage : VCE(sat) = 2.9 V (typ.) (IC = 40 A) (6) High junction temperature : Tj = 175 (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate 2: Collector 3: Emitter
©2018 Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2011-05
2018-04-23 Rev.3.0
GT40WR21
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter
voltage Gate-emitter
voltage Collector current (DC) Collector current (1 ms) Diode forward current (DC) Diode forward current (100 µs) Collector power dissipation Junction temperature Storage temperature Mounting torque
(Tc = 25)
(Note 1)
VCES VGES
IC ICP IF IFP PC Tj Tstg TOR
1800 ±25 40 80 20 80 375 175 -55 to 175 0.8
V A
W Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/
voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the ...