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GT50N322A
Silicon N-Channel IGBT
Description
GT50N322A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50N322A
Voltage
Resonance Inverter Switching Application Fifth Generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.10 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs) Low saturation
voltage
: VCE (sat) =...
Toshiba Semiconductor
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