Home > GT8-14DS-2C Datasheet pdf >

(PDF) GT8-14DS-2C Datasheet download


Manufacture Part Number Description PDF

Jewel Hill Electronic
GT8002 SPECIFICATIONS FOR LCD MODULE
JEWEL HILL ELECTRONIC CO.,LTD. TABLE OF CONTENTS LCM NUMBER SYSTEM ..................................................................... 2 1. GENERAL DESCRIPTION ........................................................... 3 FEATURES..........................
GT8-14DS-2C

Toshiba Semiconductor
GT80J101 N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)
GT8-14DS-2C

Toshiba Semiconductor
GT80J101A Insulated Gate Bipolar Transistor
GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A) · · · Maximum Ratings (Ta
GT8-14DS-2C

Toshiba Semiconductor
GT80J101B Insulated Gate Bipolar Transistor
GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications • • • Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm Maximum R
GT8-14DS-2C

SAFETY SYSTEMS TECHNOLOGY
GT811 Toxic Gas Sensor Manual
DESIGN MANUAL Model GT811 Toxic Gas NOVA-Sensor 70018 The information and technical data disclosed by this document may be used and disseminated only for the purposes and to the extent s p e c i f i c a l l y a u t h o r i z e d b y SAFETY SYSTEMS TECHNOLOGY in writing. Such in
GT8-14DS-2C

Goodix
GT811 Small MID capacitive screen controller chip
5 点电容式触摸屏控制芯片 GT811 GT811 小型 MID 电容屏控制芯片 Rev.01——2011 年 12 月 30 日 ====== 免责声明====== 本出版物中所述的器件应用信息及其他类似内容仅为您提供,它们可能由更新之信息所替代。确保 应用
GT8-14DS-2C

Goodix
GT813 5 capacitive touch chip
5 点电容触控芯片 GT813 GT813 针对大屏手机的 5 点电容触控芯片 Rev.02——2011 年 11 月 06 日 ====== 免责声明====== 本出版物中所述的器件应用信息及其他类似内容仅为您提供,它们可能由更新之信息所替代。确保 应用
GT8-14DS-2C

Goodix
GT818 Smart phones 5:00 capacitive screen controller chip
5 点电容式触摸屏控制芯片 GT818 GT818 适用于智能手机的 5 点电容屏控制芯片 Rev.01——2011 年 3 月 7 日 ====== 免责声明====== 本出版物中所述的器件应用信息及其他类似内容仅为您提供,它们可能由更新之信息所替代
GT8-14DS-2C

Goodix
GT828 A 5-point Touch solution for Tablet
GT828: A 5-point touch Solution for Tablet GT828 A 5-point Touch solution for Tablet Rev.03——2012.03.28 ====== Announcement of exemption====== The application information and other similar content in this publication are only provided for you and they may be substituted by a
GT8-14DS-2C

ETC
GT8G101 SIlicon N-Channel MOS Type
GT8-14DS-2C

Toshiba Semiconductor
GT8G103 N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
GT8-14DS-2C

Toshiba Semiconductor
GT8G121 N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
GT8-14DS-2C

Toshiba Semiconductor
GT8G131 N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm · · · · · Supplied in Compact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate dri
GT8-14DS-2C

Toshiba Semiconductor
GT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G132 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G132 Strobe Flash Applications Unit: mm • • • • • Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enha
GT8-14DS-2C

Toshiba Semiconductor
GT8G133 Insulated Gate Bipolar Transistor
GT8G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G133 Strobe Flash Applications • • • • Compact and Thin (TSSOP-8) package Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Unit: m
GT8-14DS-2C

Toshiba Semiconductor
GT8G134 Insulated Gate Bipolar Transistor
GT8G134 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G134 Strobe Flash Applications • • • Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=2.5V(min))/ Unit: mm Absolute Maximum Ratings (Ta = 25°C) C
GT8-14DS-2C

Toshiba Semiconductor
GT8G136 Insulated Gate Bipolar Transistor
GT8G136 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G136 Strobe Flash Applications • • • Compact and Thin (TSSOP-8) package Enhancement-mode Peak collector current: IC = 150 A (max) (@VGE=3.0V(min),Ta=70℃(max))/ Unit: mm Absolute Maximum Ratings
GT8-14DS-2C

Toshiba Semiconductor
GT8J101 N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
GT8-14DS-2C

Toshiba Semiconductor
GT8J102 Insulated Gate Bipolar Transistor
GT8-14DS-2C

Toshiba Semiconductor
GT8J102SM N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
GT8-14DS-2C




Alternate Search Terms
GT8-14DS-2C datasheet GT8-14DS-2C component GT8-14DS-2C integrated circuit GT8-14DS-2C schematic GT8-14DS-2C application note T8-14DS-2C 8-14DS-2C -14DS-2C GT8-14DS-2 GT8-14DS- GT8-14DS

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)